number: db - 2 2 0 may 2010 , revision a page 1 tak cheong ? p rel i mi nary d atash e et n - channel power mos f et 10 a , 6 00 v , 0.75 g eneral description the n - channel mosfet is used an advanced termination scheme to provide enhanced voltage - blocking capability without degrading performance over time. this advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance. this device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. f eatures r obu s t h i g h v o l t ag e t e r m i na t i o n a v a l an c h e e n e r g y s pe c i f i e d d i od e is c ha r a c t e r i z e d f o r u s e in b r i dg e c i rc u i t s s ou rc e t o dr a in d i od e r e c o v e r y t i m e c o m pa r a b le t o a d i scr e t e f a s t r e c o v e r y d i od e . 1 = gate 2 = drain 3 = source device marking diagram absolute maximum ratings ( t c =25 c , unless otherwise noted ) symbol parameter value units v dss drain - source voltage 600 v v gss gate - source voltage 20 v drain current 10 a i d continuous drain current tc=100 6.4 a i d m drain current pulsed 40 a power dissipation (note 2) 125 w p d derating factor above 25 1 w/ e as single pulsed avalanche energy (note 1) 300 mj e a r repetitive avalanche energy (n ote 2) 30 mj t j operating junction temperature 150 t stg storage temperature range - 55 to +150 notes: 1. l= 10 mh, i as = 8 .0 a , v dd = 50 v, r g =50 , starting t j =25 2. re p etitive rati n g: pulse width l i mit e d b y m a xim u m j u n ction t e m p era t ure . thermal characte ristics symbol parameter value unit r jc thermal resistance, junction - to - case 1.0 /w r ja thermal resistance, junction - to - ambient 62 /w t f p 10 n60 g d s to - 220 ab 1 2 3 l xxyy tfp xxxx l = tak cheong logo xx y y = monthly date code tfpxxxx = device type
number: db - 2 2 0 may 2010 , revision a page 2 tak cheong ? p rel i mi nary d atash e et electrical characteristics off characteristics ( t a = 2 5 c u n l e ss o th e rwise n o ted ) symbol parameter test conditi ons min. typ. max. unit bv dss drain - sounce breakdown voltage v gs = 0v, i d = 250ua 600 -- -- v i dss zero gate voltage drain current v ds = 6 00v, v gs = 0v -- -- 25 ua i gssf gate - body leakage current, forward v gs = 2 0v, v ds = 0v -- -- 10 u a i gssr gate - body leakage current, reverse v gs = - 2 0v, v ds = 0v -- -- - 10 u a on characteristics ( t a = 2 5 c u n l e ss o th e rwise n o ted ) symbol parameter test conditions min. typ. max. unit v gs (th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 -- 4.0 v r ds(on) on - resist ance v gs = 10v, i d = 5 a -- 0. 63 0.75 dynamic characteristics symbol parameter test conditions min. typ. max. unit ciss input capacitance -- 1430 -- pf coss output capacitance -- 160 --- pf crss reverse transfer capac itance v ds = 2 5v, v gs = 0v, f = 1.0mhz -- 28 -- pf switching characteristics symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time -- 2 0 -- ns tr turn - on rise time -- 20 -- ns t d(off) turn - off delay time -- 55 -- ns tr turn - off fall time v dd = 300v, i d = 10 a, v gs = 10v, r g = 4.7 (note 3 & 4) -- 30 -- ns q g total gate charge -- 60 70 nc q gs gate - source charge -- 12 -- nc q gd gate - drain charge v ds = 480v, i d = 10 a, v gs = 10v (note 3 & 4) -- 2 8 -- nc drain - source diode characteristics and maximum ratings symbol parameter test conditions min. typ, max. unit i s maximum continuous drain - source diode forward current -- -- 10 a i sm maximum pulsed drain - source diode forward current -- -- 40 a v sd drain - source diode forward voltage v gs = 0v, i s = 10 a - - -- 1.5 v t rr reverse recovery time -- 600 -- ns qrr reverse recovery charge -- 4.3 -- nc i rrm reverse recovery current v gs = 0v, i s = 10a, di f / dt = 100a/us (note 3) -- 13 -- a notes: 3 . p u lse test: pulse w i dth ?? 3 8 0 u s, du t y cycle 2% . 4 . b asical ly not affected by working temperature .
number: db - 2 2 0 may 2010 , revision a page 3 tak cheong ? p rel i mi nary d atash e et typical characteristics
number: db - 2 2 0 may 2010 , revision a page 4 tak cheong ? p rel i mi nary d atash e et
number: db - 2 2 0 may 2010 , revision a page 5 tak cheong ? p rel i mi nary d atash e et
number: db - 2 2 0 may 2010 , revision a page 6 tak cheong ? p rel i mi nary d atash e et test circuit and waveform
number: db - 2 2 0 may 2010 , revision a page 7 tak cheong ? p rel i mi nary d atash e et to220 ab package outline millimeters inches dim min max min max a 3.6 0 4.8 0 0.142 0.189 a1 1.2 0 1.4 0 0.047 0.055 a2 2.0 3 2.9 0 0.0 80 0.114 b 0. 40 1.0 0 0.016 0.039 b 2 1.2 0 1. 78 0.047 0.07 0 c 0.36 0.6 0 0.014 0.024 d 14.2 2 16.5 0 0.5 60 0.650 e 2.34 2.74 0.092 0.108 e 9. 70 10.6 0 0.382 0.417 h1 5.8 4 6.8 5 0.2 30 0.270 l 12.7 0 14.7 0 0.500 0.579 l1 2.70 3.30 0.106 0.130 ?p 3.5 0 4.0 0 0.1 38 0.157 q 2.54 3.4 0 0.100 0.134 note: above package outline conforms to jedec to - 220ab
number: db-100 april 14, 2008 / a disclaimer notice tak cheong ? notice the information presented in this document is for reference only. tak cheong reserves the right to make changes without notice for the specification of the products displayed herein. the product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controlle rs and other safety devices), tak cheong semiconductor co., ltd., or anyone on its behalf, assumes no responsi bility or liability for any damagers resulting from such improper use of sale. this publication supersedes & replaces all information reviously supplied. for additional information, please visit our website http://www.takcheong.com , or consult your nearest tak cheong?s sales office for further assistance.
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